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Wong, M. Jaros, I. Morrison and J. P. Hagon, Phys. Rev. , 60 (1988) 2221. 8 M. S. Hybertsen, M. Schluter, R. People, S. A. Jackson, D. V. Lang, T. P. Pearsall, J. C. Bean, J. M. Vandenberg and J. Bevk, Phys. Rev. B, 37(1988) 10195. 9 S. Satpathy, R. M. Martin and C. G. Van de Walle, Phys. Rev. B, 38 (1988) 13237. 10 G. Abstreiter, K. Eberl, E. Friess, W. Wegscheider and R. Zachai, J. Cryst. Growth, 95 (1989) 431. 11 T. P. Pearsall, J. Bevk, J. C. Bean, J. Bonar, J. P. Mannaerts and A. Ourmazd, Phys.
1(a) and 1(e). The energy levels for the alloy occur at approximately the average of the corresponding levels for silicon and germanium. Since the Lc and Tc states of silicon are considerably above those of germanium, whereas the Xc states are low energy in both silicon and germanium, this averaging causes the alloy conduction bands at L and T to move upwards relative to the X states. The alloy becomes indirect from T to X and, as will be confirmed later, the states at L and V become irrelevant for the question of superlattice directness.
In modelling the structures grown on silicon or germanium, the starting hamiltonian we use has tetragonal symmetry (point group D 2h ). In order to model deviations from the bulk translational symmetry in the interface plane, we enlarge the unit cell in the interface plane into a rectangular block whose dimensions are 16 and eight atomic layers along the <100> and <010> directions respectively (Fig. 1). LARGE UNIT CELL IN THE INTERFACE PLANE 16 atoms per cell <010> 8 layers (100 > 16 layers Fig.
