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Barrie, Proc. Phys. Soc. (London) 71, 676 (1958). l5 ’. 20 PAUL W . KRUSE b . Dependence of the Hall Coefficient, Electrical Conductivity, and Carrier Mobilities of InSb Containing Shallow Donors and Acceptors upon Temperature and Carrier Concentration Most of the electrically active impurity atoms in InSb, whether donors or acceptors, have shallow activation energies (see Table I, after Hulme'). At 77°K or above-the temperature range of interest for photoconductive and photoelectromagnetic InSb detectors-these impurity centers are thermally ionized.
38, 1626 (1967). 3 6 A. S. Volkov and V. V. Galavanov, Fiz. Tekh. Poluprou. -Semicond. ) 1, 129 (1967)l. 37 A. S. Gulyaeva, V. S. Ivleva, and M. I . Iglitsyn, Fiz. Tuerd. ) 8, 1972 (1967)l. S. W. Kurnick and R. N. Zitter, J . Appl. Phys. 27, 278 (1956). 39 P. W. Kruse, L. D. McGlauchlin, and R. B. ” Wiley, New York, 1962. 34 40 PAUL W . KRUSE sample thickness and unequal front- and back-surface recombination velocities. ZitterZ9assumes infinite absorption and thick samples, but considers the case in which trapping occurs so that the carrier lifetimes are not equal.
2 p, that a power per unit area PDof 10- W/cm2 can be dissipated equally well by either type, that the detector width w is 1 mm, and that the thickness d is 5 p. Values for pn and b have been obtained from Figs. 6 and 7. For p-type InSb the value of IC = 1 x lo9 cmP3sec has been assumed to be the best compromise between the three reported v a l ~ e s . For ~ ~ n-type * ~ ~ InSb ~ ~ T, ~ = 8 x lO-'sec, as pointed out previously. From Fig. 2 ,u of p-type InSb detectors theoretically can be well above lo6 V/W.
