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G. in green laser pointers or as arrays in higher-powered lasers) 848 nm – laser mice 980 nm – InGaAs pump for optical amplifiers, for Yb:YAG DPSS lasers 1064 nm – AlGaAs fiber-optic communication 1310 nm – InGaAsP fiber-optic communication 1480 nm – InGaAsP pump for optical amplifiers 1512 nm – InGaAsP gas sensing: NH3 1550 nm – InGaAsP fiber-optic communication 1625 nm – InGaAsP fiber-optic communication, service channel 1654 nm – InGaAsP gas sensing: CH4 1877 nm – GaSbAs gas sensing: H2O 2004 nm – GaSbAs gas sensing: CO2 2330 nm – GaSbAs gas sensing: CO 2680 nm – GaSbAs gas sensing: CO2 History The first to demonstrate coherent light emission from a semiconductor diode (the first laser diode), is widely acknowledged to have been Robert N.

But it so happens that the atomic states at the cleavage plane are altered (compared to their bulk properties within the crystal) by the termination of the perfectly periodic lattice at that plane. Surface states at the cleaved plane, have energy levels within the (otherwise forbidden) bandgap of the semiconductor. Essentially, as a result when light propagates through the cleavage plane and transits to free space from within the semiconductor crystal, a fraction of the light energy is absorbed by the surface states whence it is converted to heat by phonon-electron interactions.

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