By Chow W.W., Koch S.W
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Extra info for Semiconductor-Laser Fundamentals
Sample text
18 Carrier concentration as a function of inverse temperature, comparing freeze-out behavior of dopants in Si-, Ge- and GaAs. els. With the development of HgCdTe and other intrinsic materials with much larger absorption coefficients in the near-infrared (NIR), use of extrinsic photoconductors is now restricted to wavelengths beyond ~ 2 0 μ π ^ . This translates to ionization energies of 50 meV or less. Such dopant levels are often completely thermally ionized at room temperature and even at liquid nitrogen temperature.
In practice, the short wavelength cut-offs are often due to spectrometer and beamsplitter responses. Long wavelength response is obtained by using the shallowest dopant that can be easily introduced and well controlled in crystal growth. 17 Comparison of peak spectral response for various extrinsic photoconductor materials. 3 meV with a cut-off of M 2 0 μπι), and any of the shallow n-type dopants (Te, Sn, Si, . . 7 meV and cut-off of 220 μπι, without use of excited states). Mechanisms to extend these limits, using applied stress or impurity band doping, will be discussed later.
Quantum-well structures have larger barrier widths, with each well behaving in a quasiisolated fashion. Optical absorption in a 2D quantum well demonstrates the quantized nature of the electron states. A wide variety of photoconductivity experiments have been performed in superlattice and quantum-well structures [12]. Of interest for detector performance is the possibility of tuning the absorption edge by varying the widths and heights of the barriers and wells. In addition, transport properties involving tunneling between wells and transport through the minibands become important.
