By Eli Kapon

  • a helpful and up to date reference for the full box of circuit elements of excessive pace semiconductor devices."
    --MICROELECTRONICS JOURNAL

Content:
Preface

, Pages ix-xii
Chapter 1 - Quantum good semiconductor lasers

, Pages 1-121, Bin Zhao, Amnon Yariv
Chapter 2 - Strained Layer Quantum good Lasers

, Pages 123-176, Alfred R. Adams, Eoin P. O'Reilly, Mark Silver
Chapter three - High-Speed Lasers

, Pages 177-290, Radhakrishnan Nagarajan, John E. Bowers
Chapter four - Quantum cord and Quantum Dot Lasers

, Pages 291-360, Eli Kupon
Chapter five - Quantum Optics results in Semiconductor Lasers

, Pages 361-441, Y. Yamamoto, S. Inoue, G. Björk, H. Heitmann, F. Matinaga
Index

, Pages 443-453

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Additional info for Semiconductor Lasers I. Fundamentals

Example text

At lower temperatures, the Fermi-Dirac occupation factor for the energy states in the SCH OCL region is reduced considerably. The more abrupt cutoff of the Fermi-Dirac occupation functions at low temperatures take advantage of the step-jump 2D density of states profile in contributing to relatively large increase in Go with increasing injected carrier density N. Thus the differential gain enhancement due to the quantum effect of injected carriers in SQW laser structures is recovered at low temperatures.

For the electron-heavy hole transitions, the reduced density of states is a steplike function [see Prj(~) in Eq. 110)] very similar to that shown in Fig. 6 with m e replaced by mrh mhh/(m e + mhh), Ee, z(1) replaced by Ee, z(1) + Ehh, z(1) , Ee, z(2) replaced by Ee, z(2) + Ehh,z(2), etc. , the maximum of Go(E) spectrum > 0], the maximum optical gain in the spectral range near Eg + Ee, z(1) + Ehh, z(1) experiences a large increase due to the step-jump in the reduced density of states at Eg + Ee, z(1) + Ehh, z(1).

1 3 : Calculated 2D peak gain GO(top) and corresponding differential gain G~ (bottom) as a function of carrier density in a typical GaAs/A1GaAs SCH 100-A single QW laser with and without consideration of the state-filling effects. The calculation was made by using the decoupled valence band and optical gain theory discussed in Sect. 3. 4. 59 State filling in q u a n t u m well lasers ,~, SQW ....... ' r 9 2 0 ,,m a 1- i ! 0 ' ' ' ' I 50 "1 I I ' I 100 M o d a l gain ' ' ' ~ I 150 ' I i ' 200 ( c m -1 ) Figure 1 .

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