By T. Itoh (Eds.)
This quantity presents modern details at the experimental, theoretical and technological elements of movie development assisted by way of ion beams. Ion beam assisted movie development is among the foremost strategies in assisting the expansion of top quality skinny sturdy motion pictures in a managed approach. furthermore, ion beams play a dominant function cut back the expansion temperature of skinny motion pictures of excessive melting aspect fabrics. In Read more...
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Arthur, Suf. , 43 (1974) 449. [3 2 ] P. Drathen, K. Ranke, and K. Jacobi, Surf. , ΊΊ_ (1978) 162. M. J. Quinn, J. Vac. Sei. , 13 (1976) 609. [3 4 ] T. Hariu, K. Takenaka, S. Shibuya, Y. Komatsu and Y. Shibata, Thin Solid Films, 80 (1981) 235. M. J. Soukup, Thin Solid Films, 98 (1982) 215. H. Kahn, Surf. , 9 (1968) 306. E. E. Wickersham, J. Appl. , 47 (1976) 3630. [3 8 ] G. A. E. E. 59 (1979) 183. [3 9 ] Reference 6, page 45. H. E. Greene, J. Appl. , 50 (1979) 6396. E. E. Greene, J. Appl. , 47 (1976) 4734.
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At the higher density region, efficiency is decreased as a result of concentration quenching which is the EL deduced from the increases of the Tb-Tb pairing number and the decrease of electron mean free path. 45 ^ m and a typical voltage is about 70 V in which a low voltage operation can be achieved. %) ιο' 2+ Fig. 2 K: polycrystalline target (a), without H 9 S gas (b) and with H2S gas ( c ) [ 1 9 ] Z Fig. 10 Efficiency of ZnS:Mn and ZnS:TbF^ as a function of impurity concentration[15]. 49 Ohnishi ZnSrTbF- et al-[15] have also considered the fabrication of AC EL device by films using RF sputtering.
