By Alexander A. Demkov, Alexandra Navrotsky
This publication offers the basics of novel gate dielectrics which are being brought into semiconductor production to make sure the continual scaling of CMOS units. As it is a quickly evolving box of analysis we elect to target the fabrics that ensure the functionality of machine purposes. each one of these fabrics are transition steel oxides. sarcastically, the d-orbitals liable for the excessive dielectric consistent reason critical integration problems, therefore intrinsically restricting high-k dielectrics. notwithstanding new within the electronics a lot of those fabrics are recognized within the box of ceramics, and we describe this targeted connection. The complexity of the structure-property family members in TM oxides calls for using cutting-edge first-principles calculations. numerous chapters provide a close description of the fashionable idea of polarization, and heterojunction band discontinuity in the framework of the density practical thought. Experimental equipment contain oxide soften resolution calorimetry and differential scanning calorimetry, Raman scattering and different optical characterization strategies, transmission electron microscopy, and X-ray photoelectron spectroscopy.
Many of the issues encountered on this planet of CMOS also are proper for different semiconductors resembling GaAs. A accomplished evaluate of contemporary advancements during this box is hence additionally given. The booklet may be of curiosity to these actively engaged in gate dielectric learn, and to graduate scholars in fabrics technological know-how, fabrics Physics, fabrics Chemistry, and electric Engineering.
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