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Example text
In other words, Deff at any depth yc is the minimum dose needed to bring the depletion edge to that depth, making yc = w. Figure 18(c) indicates the result of increasing implant depth. Increasing the depth also increases the voltage drop between the interface and the implant, again reducing the depletion width. 10 As the depth of the implant is increased, w moves toward the implant, as Fig. 18(c) shows. Ultimately, yc = w, and D, equals the Deff corresponding to this depth. Any further increase in depth carries the depletion edge with the implant.
The above discussion of the behavior of the depletion width, w, (subscript "I" for "implanted"), and effective dose now will be made quantitative using the equivalent ^-function implant, as justified in Refs. 4 and 10. We will find the depletion width, w,, corresponding to a given value of band bending at the interface, φ8, from Poisson's equation. Suppose the delta function is located at y = yc with dose Dl ions per unit area. 9) using the background doping level, NB per unit volume. 4) twice, ß 20 the threshold shift as a function of implant depth is shown for several doses. 16) contributes. 2 0 Fig. 20. 10) Threshold change AVT vs. 15). (From As implant depth is increased the decrease of depletion width causes the net depletion layer charge to drop. 16) become important. Ultimately, for large enough implant depths, the depletion edge reaches the implant, and Dx becomes Deff. For still greater implant depths enough ions are neutralized to maintain Deff, regardless of the initial value of dose.
