By Fabiano Fruett
Mechanical tension impacts the importance of base-emitter voltages of ahead biased bipolar transistors. This phenomenon is termed the piezojunction impression. The piezojunction impression is the most reason for inaccuracy and flow in built-in temperature sensors and bandgap voltage references. the purpose of The Piezojunction influence in SiliconIntegrated Circuits and Sensors is twofold. to start with, to explain concepts which may decrease the mechanical-stress-induced inaccuracy and long term instability. Secondly, to teach, that the piezojunction impact will be utilized for brand spanking new varieties of mechanical-sensor constructions. in the course of IC fabrication and packaging thermo-mechanical rigidity is triggered, while the packaged chips settle down to the temperature of application.
The piezojunction influence is brought on by a stress-induced switch within the conductivity of the minority-charge providers, whereas the piezoresistive impression is brought on by the same impression for the majority-charge companies. To characterise the anisotropic piezojunction impression, the authors played systematic investigations over broad levels of mechanical tension and temperature. The experiments were played for varied crystal and rigidity orientations. The experimental effects were used to extract the 1st- and second-order piezojunction (FOPJ and SOPJ) coefficients for bipolar transistors.
it truly is proven how the data of the piezojunction and piezoresistive coefficients can used to reduce the bad mechanical-stress results at the electric features of transistors and resistors, respectively. units with decrease mechanical-stress sensitivity are available by means of evaluating their piezo-coefficients. The format of the equipment can be optimized to minimize the mechanical-stress sensitivity.
As a subsequent step it truly is proven, how the data of the piezo-effects on machine point can be utilized to foretell and to lessen their unfavorable effect on circuit point. this can be proven for a few vital simple circuits, together with translinear circuits, temperature transducers and bandgap references.
eventually, it truly is proven how the piezojunction impression can be utilized to manufacture stress-sensing components. it seems that, compared to resistive stress-sensing components, the piezojunction sensors have the good thing about a smaller measurement and extremely low energy dissipation.
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Extra resources for The Piezojunction Effect in Silicon Integrated Circuits and Sensors
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525-539, 1957. N. L. Stetzer, Piezoresistive properties of silicon diffused layers, J. Appl. , 34, pp. 313-318, 1963. N. W. Chapman and D. Long, Silicon-diffused-element piezoresistive diaphragms, J. Appl. , 33, pp. 3322-3327, 1962. M. Gieles, Subminiature silicon pressure transducer, Digest, IEEE ISSCC, Philadelphia, , pp. 108-109, 1969. [21] Y. Kanda, A graphical representation of the piezoresistance coefficients in silicon, IEEE Trans. on electron devices, ed-29, n 1, Jan. 1982. [22] Y. Kanda, Piezoresistance effect of silicon, Sensors and Actuators A, vol.
An alternative expression can be written for the relative change in the conductivity [44]: / K 2 \ V^ijkl ~ ttyklnm Phi0'mn ' where k° is the majority carrier conductivity of the stress-free material. 2 37 Piezoresistive coefficients The symmetry of the diamond structure reduces the number of first-order piezoresistance coefficients %/ to three and second-order piezoresistance coefficients %:/m« to nine. Normally, a convention contraction is used to reduce the complexities of the index labels through a renumbering scheme using the six-component notation (suffixes change from 11, 22, 33, 23, 13 and 12 to 1,2, 3, 4, 5 and 6 respectively).
8 shows the saw lanes for two orientations. 4 mm thick. These dimensions can change depending on the wafer process used and the layout of the integrated DUT, which are discussed in Chapter 4. 8 is limited by the tolerance of the geometrical parameters. This inaccuracy is estimated at about 6%, and so are the relative errors obtained using this technique. 2 Test structure for mechanical stress and temperature characterization To characterize the microelectronic devices under compressive and tensile stress at different temperatures a complete mechanical test structure has been developed and fabricated.
